document number: 88584 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 15-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 glass passivated ultrafast rectifier EGP30A thru egp30g vishay general semiconductor features ? superectifier structure for high reliability condition ? cavity-free glass- passivated junction ? ultrafast reverse recovery time ? low forward voltage drop ? low leakage current ? low switching losses, high efficiency ? high forward surge capability ? solder dip 275 c max. 10 s, per jesd 22-b106 ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. mechanical data case: gp20, molded epoxy over glass body molding compound meets ul 94 v-0 flammabi lity rating base p/n-e3 - rohs compliant, commercial grade base p/nhe3 - rohs compli ant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 cla ss 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end primary characteristics i f(av) 3.0 a v rrm 50 v to 400 v i fsm 125 a t rr 50 ns v f 0.95 v, 1.25 v t j max. 150 c gp20 superectifier ? maximum ratings (t a = 25 c unless otherwise noted) parameter symbol EGP30A egp30b egp30c egp30d egp30f egp30g unit maximum repetitive pe ak reverse voltage v rrm 50 100 150 200 300 400 v maximum rms voltage v rms 35 70 105 140 210 280 v maximum dc blocking voltage v dc 50 100 150 200 300 400 v maximum average forward rectified current 0.375" (9.5 mm) lead length at t a = 55 c i f(av) 3.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 125 a operating and storage temperature range t j , t stg - 65 to + 150 c www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88584 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 15-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 EGP30A thru egp30g vishay general semiconductor note (1) thermal resistance from junction to ambient, and from junc tion to lead at 0.375" (9.5 mm) lead length, pcb mounted note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current de rating curve fig. 2 - maximum non-re petitive peak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol EGP30A egp30b egp30c egp30d egp30f egp30g unit maximum instantaneous forward voltage 3.0 a v f 0.95 1.25 v maximum dc reverse current at rated dc blocking voltage t a = 25 c i r 5.0 a t a = 125 c 100 maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 50 ns typical junction capacitance 4.0 v, 1 mhz c j 85 75 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol EGP30A egp30b egp30c egp30d egp30f egp30g unit typical thermal resistance r ? ja (1) 20 c/w r ? jl (1) 8.0 ordering information (example) preferred p/n unit weight (g) preferred package code ba se quantity delivery mode egp30g-e3/54 1.01 54 1400 13" diam eter paper tape and reel egp30g-e3/73 1.01 73 1000 ammo pack packaging egp30ghe3/54 (1) 1.01 54 1400 13" diameter paper tape and reel egp30ghe3/73 (1) 1.01 73 1000 ammo pack packaging 2.0 3.0 1.0 0 0 25 50 75 100 125 150 175 average forwar d rectied current (a) ambient temperature (c) re s i s tive or inductive load 0.375 " (9.5 mm) lead length 1 10 100 0 25 50 75 100 125 150 175 number of cycle s at 60 hz peak forwar d s urge current (a) t j = t j max. 8.3 m s s ingle half s ine-wave www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 88584 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 15-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 EGP30A thru egp30g vishay general semiconductor fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse leakage characteristics fig. 5 - typical j unction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 100 in s tantaneou s forward voltage (v) in s tantaneou s forward current (a) t j = 150 c t j = 25 c pul s e width = 300 s 1 % duty cycle e g p30a thru e g p30d e g p30f and e g p30 g s e voltage (%) in s tantaneou s rever s e leakage current (a) t j = 150 c t j = 125 c t j = 25 c t j = 75 c 0 0 30 60 90 120 150 180 210 1 10 100 1000 rever s e voltage (v) junction capacitanc e (pf) t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p e g p30a thru e g p30d e g p30f and e g p30 g 0.01 0.1 1 10 100 0.1 1 10 100 t - pul s e duration ( s ) tran s ient thermal impedance (c/w) gp20 1.0 (25.4) min. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) min. 0.210 (5.3) 0.190 (4.8) dia. 0.042 (1.07) 0.037 (0.94) dia. www.datasheet.co.kr datasheet pdf - http://www..net/
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